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onsemi FQB16N25TM — Discrete Semiconductors

onsemi FQB16N25TM

MPNFQB16N25TM
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQB16N25TM specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation3.13W (Ta), 142W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs230mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 25 V