Skip to main content
onsemi FQB11N40TM — Discrete Semiconductors

onsemi FQB11N40TM

MPNFQB11N40TM
Obsolete
$0.5200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQB11N40TM specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage400 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11.4A (Tc)
Power dissipation3.13W (Ta), 147W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs480mOhm @ 5.7A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1400 pF @ 25 V