Skip to main content
onsemi FQAF6N90 — Discrete Semiconductors

onsemi FQAF6N90

MPNFQAF6N90
Obsolete
$1.2500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQAF6N90 specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.5A (Tc)
Power dissipation96W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs1.9Ohm @ 2.3A, 10V
Gate charge (Qg) (Max) @ vgs52 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1880 pF @ 25 V