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onsemi FQAF13N80 — Discrete Semiconductors

onsemi FQAF13N80

MPNFQAF13N80
Obsolete
$5.5200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQAF13N80 specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation120W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs750mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs88 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3500 pF @ 25 V