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onsemi FQA62N25C — Discrete Semiconductors

onsemi FQA62N25C

MPNFQA62N25C
Obsolete
$2.1000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQA62N25C specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C62A (Tc)
Power dissipation298W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3, SC-65-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 31A, 10V
Gate charge (Qg) (Max) @ vgs130 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6280 pF @ 25 V