FQA13N80-F109
onsemi · QFET® Series
MOSFET N-CH 800V 12.6A TO3PN
[IN STOCK] In Stock: 457 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | QFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12.6A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-3P-3, SC-65-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 750mOhm @ 6.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 88 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3500 pF @ 25 V |
FQA13N80-F109
[ALLOC] verified