Skip to main content
onsemi FQA13N80 — Discrete Semiconductors

onsemi FQA13N80

MPNFQA13N80
Obsolete
$2.3900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQA13N80 specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12.6A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3, SC-65-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs750mOhm @ 6.3A, 10V
Gate charge (Qg) (Max) @ vgs88 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3500 pF @ 25 V