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onsemi FQA13N50CF_F109 — Discrete Semiconductors

onsemi FQA13N50CF_F109

MPNFQA13N50CF_F109
Obsolete
$3.5000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQA13N50CF_F109 specifications
ParameterValue
SeriesFRFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation218W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3, SC-65-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs480mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2055 pF @ 25 V