5000 Vrms isolation for motor-drive gate drive
The FOD8342V is a single-channel optocoupled gate driver from onsemi, rated for 5000 Vrms isolation and delivering 3 A peak output current. This combination directly drives the gate of medium-power IGBTs and SiC MOSFETs without an external buffer stage, simplifying the BOM and saving board area in motor drives, solar inverters, and switched-mode power supplies. The 20 kV/µs minimum common-mode transient immunity ensures the output remains stable during fast dV/dt events at the switching node — a common failure mode in hard-switching topologies where the floating-side ground bounces relative to the logic-side ground.
38 ns rise / 24 ns fall edges tighten dead-time budget
Typical rise and fall times of 38 ns and 24 ns allow the designer to set a shorter dead-time interval between complementary switches, reducing circulating current losses. Maximum propagation delay is 210 ns for both tpLH and tpHL, with pulse-width distortion capped at 65 ns — this symmetry simplifies timing margin calculations in half-bridge and full-bridge topologies. The output supply range of 10 V to 30 V covers standard gate-drive voltages for IGBTs (typically 15 V) and SiC MOSFETs (18–20 V). The 2.5 A source and 2.5 A sink capability matches the gate charge of common 600 V / 30 A IGBT modules without a push-pull booster.
Active production, UL recognized, 6-SOP package
It carries UL recognition and is ROHS3 compliant. The 6-SOP package — 6.80 mm body width — is a standard footprint shared with other onsemi optocoupled drivers, easing second-sourcing. Sourced per RFQ against your BOM quantity; no stock-holding claim is made here.
