3 A peak output for direct IGBT/MOSFET gate drive
The FOD3184SD delivers a 3 A peak output current — enough to drive medium-power IGBTs and MOSFETs directly without an external buffer stage. The output high/low current is symmetric at 2.5 A, so turn-on and turn-off edge rates match, reducing dead-time uncertainty in half-bridge topologies.
5000 Vrms reinforced isolation for motor-drive safety
Reinforced isolation rated at 5000 Vrms meets the creepage and clearance requirements for 600 V and 1200 V class IGBT gate drives in industrial VFDs, servo drives, and uninterruptible power supplies. The 35 kV/µs common-mode transient immunity keeps the gate drive stable during fast dv/dt events at the switch node — a common failure point in bridge-leg designs.
38 ns rise, 24 ns fall — timing budget for 50+ kHz switching
Typical rise/fall times of 38 ns and 24 ns with a maximum propagation delay of 210 ns allow the FOD3184SD to support switching frequencies above 50 kHz while maintaining tight pulse-width distortion (65 ns max). This keeps the gate waveform clean and reduces switching losses in fast-recovery IGBT modules.
The output supply spans 15 V to 30 V, covering the standard gate-drive rails for IGBTs (typically +15 V on, -5 V to -10 V off via a split supply).