FFSP0865B
onsemi
DIODE SIL CARB 650V 10.1A TO220
[IN STOCK] In Stock: 5 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Diode type | Silicon Carbide Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.7 V @ 8 A |
| Current - reverse leakage @ vr | 40 µA @ 650 V |
| Current - average rectified | 10.1A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
| Case | TO-220-2 |
| Capacitance @ vr, | 336pF @ 1V, 100kHz |
| Reverse recovery time | 0 ns |
FFSP0865B
[ALLOC] verified