FFSM1065A
onsemi
DIODE SIL CARBIDE 650V 11A 4PQFN
[IN STOCK] In Stock: 10 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.75 V @ 10 A |
| Current - reverse leakage @ vr | 200 µA @ 650 V |
| Current - average rectified | 11A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | SiC (Silicon Carbide) Schottky |
| Case | 4-PowerTSFN |
| Capacitance @ vr, | 575pF @ 1V, 100kHz |
| Reverse recovery time | 0 ns |
FFSM1065A
[ALLOC] verified