onsemi FFSM1065A
MPNFFSM1065A
End of Life
DIODE SIL CARBIDE 650V 11A 4PQFN
$5.3Ref. price · indicative, final on quote
Packaging4-PowerTSFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.75 V @ 10 A |
| Current - reverse leakage @ vr | 200 µA @ 650 V |
| Current - average rectified | 11A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | SiC (Silicon Carbide) Schottky |
| Case | 4-PowerTSFN |
| Capacitance @ vr, | 575pF @ 1V, 100kHz |
| Reverse recovery time | 0 ns |