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onsemi FDZ3N513ZT

onsemi FDZ3N513ZT

MPNFDZ3N513ZT
End of Life

MOSFET P-CH 30V 1.1A 4WLCSP

$0.32Ref. price · indicative, final on quote
Packaging4-XFBGA, WLCSP
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDZ3N513ZT specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Current - continuous drain (Id) @ 25°C1.1A
Power dissipation1W (Ta)
Operating temperature-55°C ~ 125°C (TJ)
PackageBulk
Vgs+5.5V, -300mV
TechnologyMOSFET (Metal Oxide)
FET featureSchottky Diode (Isolated)
Case4-XFBGA, WLCSP
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs462mOhm @ 300mA, 4.5V
Gate charge (Qg) (Max) @ vgs1 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds85 pF @ 15 V