FDT439N
onsemi
MOSFET N-CH 30V 6.3A SOT223-4
[IN STOCK] In Stock: 80 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 6.3A (Ta) |
| Power dissipation | 3W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 45mOhm @ 6.3A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 500 pF @ 15 V |
FDT439N
[ALLOC] verified