FDT1600N10ALZ

onsemi · PowerTrench® Series

MOSFET N-CH 100V 5.6A SOT223-4

onsemi FDT1600N10ALZ
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDT1600N10ALZ specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C5.6A (Tc)
Power dissipation10.42W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id2.8V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 2.8A, 10V
Gate charge (Qg) (Max) @ vgs3.77 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds225 pF @ 50 V
FDT1600N10ALZ
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