FDS8884

onsemi · PowerTrench® Series

MOSFET N-CH 30V 8.5A 8SOIC

onsemi FDS8884
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[IN STOCK] In Stock: 77 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDS8884 specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8.5A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs23mOhm @ 8.5A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds635 pF @ 15 V
FDS8884
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