FDS6912A

onsemi · PowerTrench® Series

MOSFET 2N-CH 30V 6A 8SOIC

onsemi FDS6912A
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[IN STOCK] In Stock: 31 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDS6912A specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench®
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C6A
Power - max900mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs28mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs8.1nC @ 5V
Input capacitance (Ciss) (Max) @ vds575pF @ 15V
FDS6912A
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