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onsemi FDS6900S

onsemi FDS6900S

MPNFDS6900S
End of Life

N-CHANNEL POWER MOSFET

$0.53Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDS6900S specifications
ParameterValue
SeriesPowerTrench®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C6.9A (Ta), 8.2A (Ta)
Power - max900mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA, 3V @ 1mA
Rds on (Max) @ id, vgs30mOhm @ 6.9A, 10V, 22mOhm @ 8.2A, 10V
Gate charge (Qg) (Max) @ vgs11nC @ 5V, 17nC @ 5V
Input capacitance (Ciss) (Max) @ vds771pF @ 15V, 1238pF @ 15V