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onsemi FDS6675BZ

onsemi FDS6675BZ

MPNFDS6675BZ
End of Life

MOSFET P-CH 30V 11A 8SOIC

$0.9Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDS6675BZ specifications
ParameterValue
SeriesPowerTrench®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C11A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs13mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs62 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2470 pF @ 15 V