FDS4935BZ

onsemi · PowerTrench® Series

MOSFET 2P-CH 30V 6.9A 8SOIC

onsemi FDS4935BZ
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[IN STOCK] In Stock: 1,410 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDS4935BZ specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench®
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C6.9A
Power - max900mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 P-Channel (Dual)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs22mOhm @ 6.9A, 10V
Gate charge (Qg) (Max) @ vgs40nC @ 10V
Input capacitance (Ciss) (Max) @ vds1360pF @ 15V
FDS4935BZ
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