FDS4559

onsemi · PowerTrench® Series

MOSFET N/P-CH 60V 8SOIC

onsemi FDS4559
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDS4559 specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench®
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C4.5A, 3.5A
Power - max1W
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
ConfigurationN and P-Channel
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs55mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs18nC @ 10V
Input capacitance (Ciss) (Max) @ vds650pF @ 25V, 759pF @ 25V
FDS4559
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