onsemi FDPC1012S
MPNFDPC1012S
End of Life
POWER FIELD-EFFECT TRANSISTOR
$0.4Ref. price · indicative, final on quote
Packaging8-PowerWDFN
RoHSNot applicable
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | 2 N-Channel (Dual) Asymmetrical |
| Mounting | Surface Mount |
| Drain to source voltage | 25V |
| Current - continuous drain (Id) @ 25°C | 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc) |
| Power - max | 800mW (Ta), 900mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| FET feature | Standard |
| Case | 8-PowerWDFN |
| Vgs(th) (Max) @ id | 2.2V @ 250µA, 2.2V @ 1mA |
| Rds on (Max) @ id, vgs | 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 8nC @ 4.5V, 25nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 1075pF @ 13V, 3456pF @ 13V |