FDP045N10A-F102

onsemi · PowerTrench® Series

MOSFET N-CH 100V 120A TO220-3

onsemi FDP045N10A-F102
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Technical specifications

FDP045N10A-F102 specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation263W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.5mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs74 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5270 pF @ 50 V
FDP045N10A-F102
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