FDMS8680

onsemi · PowerTrench® Series

MOSFET N-CH 30V 14A/35A 8PQFN

onsemi FDMS8680
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDMS8680 specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C14A (Ta), 35A (Tc)
Power dissipation2.5W (Ta), 50W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 14A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1590 pF @ 15 V
FDMS8680
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