FDMS86320

onsemi · PowerTrench® Series

MOSFET N-CH 80V 10.5A/22A 8PQFN

onsemi FDMS86320
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDMS86320 specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C10.5A (Ta), 22A (Tc)
Power dissipation2.5W (Ta), 69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs11.7mOhm @ 10.5A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2640 pF @ 40 V
FDMS86320
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