onsemi FDMD8900
MPNFDMD8900
End of Life
POWER FIELD-EFFECT TRANSISTOR, N
$0.91Ref. price · indicative, final on quote
Packaging12-PowerWDFN
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 19A, 17A |
| Power - max | 2.1W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| FET feature | Standard |
| Case | 12-PowerWDFN |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 4mOhm @ 19A, 10V |
| Gate charge (Qg) (Max) @ vgs | 35nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 2605pF @ 15V |