FDMC86262P

onsemi · PowerTrench® Series

MOSFET P-CH 150V 2A/8.4A 8MLP

onsemi FDMC86262P
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDMC86262P specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C2A (Ta), 8.4A (Tc)
Power dissipation2.3W (Ta), 40W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerWDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs307mOhm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds885 pF @ 75 V
FDMC86262P
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