FDMC007N30D

onsemi

MOSFET 2N-CH 30V 46A 8PWR33

onsemi FDMC007N30D
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDMC007N30D specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C46A
Power - max1.9W, 2.5W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
Case8-PowerWDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs11.6mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs34nC @ 10V
Input capacitance (Ciss) (Max) @ vds1110pF @ 15V, 2360pF @ 15V
FDMC007N30D
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