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onsemi FDG6322C

onsemi FDG6322C

MPNFDG6322C
End of Life

MOSFET N/P-CH 25V 0.22A SC88

$0.44Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDG6322C specifications
ParameterValue
MountingSurface Mount
Drain to source voltage25V
Current - continuous drain (Id) @ 25°C220mA, 410mA
Power - max300mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
ConfigurationN and P-Channel
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs4Ohm @ 220mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.4nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds9.5pF @ 10V