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onsemi FDD8882 — Discrete Semiconductors

onsemi FDD8882

MPNFDD8882
Obsolete
$0.8600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD8882 specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C12.6A (Ta), 55A (Tc)
Power dissipation55W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs11.5mOhm @ 35A, 10V
Gate charge (Qg) (Max) @ vgs33 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1260 pF @ 15 V