Skip to main content
onsemi FDD86567-F085 — Discrete Semiconductors

onsemi FDD86567-F085

MPNFDD86567-F085
Active

MOSFET N-CH 60V 100A DPAK

$2.3200Ref. price · indicative, final on quote
PackagingTO-252-3, DPAK (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD86567-F085 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, PowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation227W (Tj)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs3.2mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs82 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4950 pF @ 30 V