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onsemi FDD86110 — Discrete Semiconductors

onsemi FDD86110

MPNFDD86110
Active
$2.8900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD86110 specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C12.5A (Ta), 50A (Tc)
Power dissipation3.1W (Ta), 127W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs10.2mOhm @ 12.5A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2265 pF @ 50 V