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onsemi FDD86081-F085 — Discrete Semiconductors

onsemi FDD86081-F085

MPNFDD86081-F085
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD86081-F085 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6.7A (Ta), 21.4A (Tc)
Power dissipation3W (Ta), 31.3W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 36µA
Rds on (Max) @ id, vgs31.5mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs6.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds493 pF @ 50 V