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onsemi FDD850N10LD — Discrete Semiconductors

onsemi FDD850N10LD

MPNFDD850N10LD
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD850N10LD specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C15.3A (Tc)
Power dissipation42W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs75mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs28.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1465 pF @ 25 V