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onsemi FDD7N25LZTM — Discrete Semiconductors

onsemi FDD7N25LZTM

MPNFDD7N25LZTM
Active

MOSFET N-CH 250V 6.2A DPAK

$0.9000Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesUniFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD7N25LZTM specifications
ParameterValue
SeriesUniFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C6.2A (Tc)
Power dissipation56W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs550mOhm @ 3.1A, 10V
Gate charge (Qg) (Max) @ vgs16 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds635 pF @ 25 V