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onsemi FDD7N20TM — Discrete Semiconductors

onsemi FDD7N20TM

MPNFDD7N20TM
Active

MOSFET N-CH 200V 5A D-PAK

$0.8200Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesUniFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD7N20TM specifications
ParameterValue
SeriesUniFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation43W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs690mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs6.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds250 pF @ 25 V