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onsemi FDD6N50FTM — Discrete Semiconductors

onsemi FDD6N50FTM

MPNFDD6N50FTM
Obsolete
$1.3000Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD6N50FTM specifications
ParameterValue
SeriesUniFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.5A (Tc)
Power dissipation89W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs1.15Ohm @ 2.75A, 10V
Gate charge (Qg) (Max) @ vgs19.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds960 pF @ 25 V