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onsemi FDD6N20TM — Discrete Semiconductors

onsemi FDD6N20TM

MPNFDD6N20TM
Obsolete
$0.7600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD6N20TM specifications
ParameterValue
SeriesUniFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.5A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs800mOhm @ 2.3A, 10V
Gate charge (Qg) (Max) @ vgs6.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds230 pF @ 25 V