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onsemi FDD6670AS — Discrete Semiconductors

onsemi FDD6670AS

MPNFDD6670AS
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD6670AS specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C76A (Ta)
Power dissipation70W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 1mA
Rds on (Max) @ id, vgs8mOhm @ 13.8A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1580 pF @ 15 V