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onsemi FDD6612A — Discrete Semiconductors

onsemi FDD6612A

MPNFDD6612A
Obsolete
$0.5100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD6612A specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9.5A (Ta), 30A (Tc)
Power dissipation2.8W (Ta), 36W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 9.5A, 10V
Gate charge (Qg) (Max) @ vgs9.4 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds660 pF @ 15 V