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onsemi FDD6530A — Discrete Semiconductors

onsemi FDD6530A

MPNFDD6530A
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD6530A specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C21A (Ta)
Power dissipation3.3W (Ta), 33W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs32mOhm @ 8A, 4.5V
Gate charge (Qg) (Max) @ vgs9 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds710 pF @ 10 V