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onsemi FDD6512A — Discrete Semiconductors

onsemi FDD6512A

MPNFDD6512A
Obsolete
$0.4100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD6512A specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C10.7A (Ta), 36A (Tc)
Power dissipation3.8W (Ta), 43W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs21mOhm @ 10.7A, 4.5V
Gate charge (Qg) (Max) @ vgs19 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1082 pF @ 10 V