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onsemi FDD5N50NZFTM — Discrete Semiconductors

onsemi FDD5N50NZFTM

MPNFDD5N50NZFTM
Obsolete
$1.0100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD5N50NZFTM specifications
ParameterValue
SeriesUniFET-II™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.7A (Tc)
Power dissipation62.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs1.75Ohm @ 1.85A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds485 pF @ 25 V