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onsemi FDD5810-F085 — Discrete Semiconductors

onsemi FDD5810-F085

MPNFDD5810-F085
Obsolete
$0.4600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD5810-F085 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, PowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C7.4A (Ta), 37A (Tc)
Power dissipation72W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs22mOhm @ 32A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1890 pF @ 25 V