onsemi FDD4N60NZ
MPNFDD4N60NZ
Obsolete
$1.2100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | UniFET-II™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3.4A (Tc) |
| Power dissipation | 114W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 2.5Ohm @ 1.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 510 pF @ 25 V |