FDD4685

onsemi · PowerTrench® Series

MOSFET P-CH 40V 8.4A/32A DPAK

onsemi FDD4685
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[IN STOCK] In Stock: 1,421 pcs
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FDD4685 specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8.4A (Ta), 32A (Tc)
Power dissipation69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs27mOhm @ 8.4A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds2380 pF @ 20 V
FDD4685
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