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onsemi FDD3510H — Discrete Semiconductors

onsemi FDD3510H

MPNFDD3510H
Obsolete
$1.2500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD3510H specifications
ParameterValue
SeriesPowerTrench®
FET typeN and P-Channel, Common Drain
MountingSurface Mount
Drain to source voltage80V
Current - continuous drain (Id) @ 25°C4.3A, 2.8A
Power - max1.3W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs80mOhm @ 4.3A, 10V
Gate charge (Qg) (Max) @ vgs18nC @ 10V
Input capacitance (Ciss) (Max) @ vds800pF @ 40V