Skip to main content
onsemi FDD306P — Discrete Semiconductors

onsemi FDD306P

MPNFDD306P
Active

MOSFET P-CH 12V 6.7A TO252

$0.9600Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD306P specifications
ParameterValue
SeriesPowerTrench®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C6.7A (Ta)
Power dissipation52W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs28mOhm @ 6.7A, 4.5V
Gate charge (Qg) (Max) @ vgs21 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1290 pF @ 6 V