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onsemi FDD18N20LZ — Discrete Semiconductors

onsemi FDD18N20LZ

MPNFDD18N20LZ
Active

MOSFET N-CH 200V 16A DPAK

$1.7900Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesUniFET™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD18N20LZ specifications
ParameterValue
SeriesUniFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation89W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs125mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1575 pF @ 25 V