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onsemi FDD16AN08A0 — Discrete Semiconductors

onsemi FDD16AN08A0

MPNFDD16AN08A0
Active

MOSFET N-CH 75V 9A/50A DPAK

$1.8100Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesUltraFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD16AN08A0 specifications
ParameterValue
SeriesUltraFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C9A (Ta), 50A (Tc)
Power dissipation135W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs16mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs47 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1874 pF @ 25 V